Gate 2019: Electronic Devices and Circuits Quiz 2

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Question 1

A biased p-type semiconductor is given as such. What will the energy band diagram look like?

• A
• B
• C
• D

Question 2

Ifa material is having a band gap of 1.42eV, then this material will produce a photon output at the wavelength of

• A0.774m
• B0.2m
• C0.873m
• D0.72m

Question 3

Two exactly same semiconductors formed from materials having bandgap of1.1 eV and 0.7 eV are taken.Then the ratio of intrinsic carrier concentration Of the first semiconductor to the second one will be _____ 10^-3 (assuming kT=0.026 eV).

• A0.45
• B2.45
• C3.45
• D4.45

Question 4

At T = 300 K, the band gap and the intrinsic carrier concentration of GaAs are 1.42 eV and respectively. In order to generate electron hole pairs in GaAs, which one of the wavelength ranges of incident radiation, is most suitable? (Given that: Plank’s constant is velocity of light is and charge of electron is

• A
• B
• C
• D

Question 5

Assume electronic charge and electron mobility If the concentration gradient of electrons injected into a P-type silicon sample is the magnitude of electron diffusion current density (in A/cm2) is _________.

• A
• B
• C
• D

Question 6

Consider an ideal silicon P-N junction diode with the following parameters

The ratio of so that 95% of current in depletion region is carried by electron is

• A0.42
• B0.98
• C0.083
• D0.063

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