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Gate 2019: Electronic Devices and Circuits Quiz 1
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Question 1
The cut-off wavelength (in μm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 1.1 eV is ________
Question 2
At T = 300 K, the hole mobility of a semiconductor
The hole diffusion constant
in cm2/s is ________
The hole diffusion constantin cm2/s is ________ Question 3
An N-type semiconductor having uniform doping is biased as shown in the figure.
If
is the lowest energy level of the conduction band, 
is the highest energy level of the valance band and 
is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?
If
is the lowest energy level of the conduction band, is the highest energy level of the valance band and is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor? Question 4
Consider a silicon sample doped with ND = 1×1015 /cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010 /cm3.If the sample is additionally doped with NA = 10×1018 /cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be _________________.
Question 5
A p-n junction with cross-section area A is doped with NA acceptor and ND donor impurities on either side. The value of charge stored on either side of depletion width is given by QJ which is equal to
Question 6
A semiconductor having electron mobility
, hole mobility
, intrinsic carrier concentration as 
is kept at 300 ° K. The maximum value of resistivity is _________ Ω-m.
, hole mobility, intrinsic carrier concentration as is kept at 300 ° K. The maximum value of resistivity is _________ Ω-m.- 1057 attempts
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