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ESE EC : Electronic Devices & Circuits Champion Quiz 1
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Question 1
An intrinsic semiconductor is doped lightly with p-type impurity. It is found that the conductivity actually decreases till a certain doping level is reached. Why does this occur?
Question 2
An intrinsic semiconductor (intrinsic electron density = 
) is doped with donors to a level of 
. What is the hole density assuming all donors to be ionized?
) is doped with donors to a level of . What is the hole density assuming all donors to be ionized? Question 3
An intrinsic semiconductor with energy gap 1 eV has a carrier concentration N at temperature 200 K. Another intrinsic semiconductor has the same value of carrier concentration N at temperature 600 K. What is the energy gap value for the second semiconductor?
Question 4
Assertion (A): In an intrinsic semiconductor, electron mobility in conduction band is different from hole mobility in valence band.
Reason (R): In an intrinsic semiconductor, electrons and holes are created solely by thermal excitation across the energy gap.
Reason (R): In an intrinsic semiconductor, electrons and holes are created solely by thermal excitation across the energy gap.
Question 5
Assertion (A): At very high temperatures, both p and n-type semiconductors behave as intrinsic semiconductor.
Reason (R): In n-type semiconductor the majority carriers are electron and in a p-type semiconductor the majority carriers are holes, whereas in an intrinsic semiconductor the number of holes and electrons are equal.
Reason (R): In n-type semiconductor the majority carriers are electron and in a p-type semiconductor the majority carriers are holes, whereas in an intrinsic semiconductor the number of holes and electrons are equal.
Question 6
Doping intrinsic Silicon with Arsenic as an impurity
Question 7
Assertion (A): An n-type semiconductor behaves as an intrinsic semiconductor at very high temperatures.
Reason (R): The breaking of the covalent bonds becomes a significant phenomenon at high temperatures.
Reason (R): The breaking of the covalent bonds becomes a significant phenomenon at high temperatures.
Question 8
Which one of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?Eg is the band gap, A is pre-factor, k is Boltzmann constant.
Question 9
The electron and hole concentrations, n and p respectively obey the relation 
where ni is the intrinsic carrier density. This expression is valid for which of the following?
where ni is the intrinsic carrier density. This expression is valid for which of the following? Question 10
Match List-I (Material) with List-II (Carrier Concentration/m3) and select the correct answer using the codes given below the lists:
List-II
A) Intrinsic semiconductor
B) Insulator
C) Extrinsic semiconductor
D) Conductor
List-II
1) 1028
2) 1022
3) 1018
4) 1014
List-II
A) Intrinsic semiconductor
B) Insulator
C) Extrinsic semiconductor
D) Conductor
List-II
1) 1028
2) 1022
3) 1018
4) 1014
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May 17ESE & GATE EC
