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GATE EC : Electronic Devices & Circuits Champion Quiz 1
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Question 1
n–type silicon is obtained by doping silicon with
Question 2
A silicon sample is uniformly doped with donor type impurities with a concentration of 1016 /cm3. The electron and hole mobilities in the sample are 1200 cm2/V-s and 400 cm2 /V-s respectively.
Assume complete ionization of impurities. The charge of an electron is 1.6 × 10–19 C. The resistivity of the sample (in Ω-cm) is _________.
Assume complete ionization of impurities. The charge of an electron is 1.6 × 10–19 C. The resistivity of the sample (in Ω-cm) is _________.
Question 3
The primary reason for the widespread use of Silicon in semiconductor device technology is
Question 4
In an n-type silicon crystal at room temperature, which of the following can have a concentration of 4 × 1019 cm-3?
Question 5
The intrinsic carrier concentration of silicon sample of 300 K is 
If after doping, the number of majority carriers is 
the minority carrier concentration is
If after doping, the number of majority carriers is the minority carrier concentration is Question 6
The energy band diagram and electron density profile n(x) in a semiconductor are shown in the figure. Assume that n (x) = 
; with α = 0.1 V/ cm and x expressed in cm. Given 
= 0.026V, Dn = 36 cm2 s–1, and 
. The electron current density (in A/cm2) at x = 0 is
; with α = 0.1 V/ cm and x expressed in cm. Given = 0.026V, Dn = 36 cm2 s–1, and . The electron current density (in A/cm2) at x = 0 is Question 7
At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435V, whereas a certain silicon diode requires a forward bias of 0.718V. Under the conditions stated above, the closest approximation of the ratio of reverse saturation current in germanium diode to that in silicon diode is
Question 8
A Silicon sample A is doped with 1018 atoms/cm3 pf Boron. Another sample B of identical dimensions is doped with 1018 atoms/cm3 of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is
Question 9
The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12eV, is 1.1μm. If the longest wavelength that can be absorbed by another material is 0.87μm, then the bandgap of this material is
Question 10
The resistivity of a uniformly doped n-type silicon sample is 0.5 Ω-cm. If the electron mobility (μn) is 1250 cm2/V-sec and the charge of an electron is 1.6 × 10–19 Coulomb, the donor impurity concentration (ND) in the sample is
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Mar 1ESE & GATE EC
