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GATE EC : Electronic Devices & Circuits Champion Quiz 5

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Question 1

Which of the following is true?

Question 2

Which of the following is true?

Question 3

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

Question 4

Which one of the following process is preferred to form the gate dielectric (SiO₂) of MOSFETs?

Question 5

A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate

Question 6

If P is Passivation, Q is n–well implant, R is metallization and S is source/drain diffusion, then the order in which they are carried out in a standard n–well CMOS fabrication process, is

Question 7

In the below circuit assumes that the transistor is in active region. It has a large β and its base-emitter voltage is 0.7V. The value of I_c is__

Question 8

Group I lists four different semiconductor devices. Match each device in Group I with its characteristic property in Group II.

Question 9

Consider the following statements S₁ and S₂.
S₁: The threshold voltage (V_T) of a MOS capacitor decrease with increase in gate oxide thickness
S₂: The threshold voltage (V_T) of a MOS capacitor decreases with increase in substrate doping concentration.
Which one of the following is correct?

Question 10

Consider an abrupt p-junction. Let V_bi be the built-in potential of this junction and V_R be the applied reverse bias. If the junction capacitance (C₁) is 1 pF for V_bi + V_R = 1V, then for V_bi + V_R = 4V, C_j will be

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ESE & GATE EC Electronic Devices and Circuits

Jun 5ESE & GATE EC