ESE EC : Electronic Devices & Circuits Champion Quiz 4

Statement (1): The resistance of a FET in non ­conducting region is very high.
Statement (II): The FET is semiconductor device.

In a bipolar junction transistor an increase in magnitude of collector voltage increases the space-charge width at the output junction diode. This causes the effective base width to decrease. This effect is known as

If the α value of a transistor changes 0.5% from its nominal value of 0.9, the percentage change in β will be

Match List-I (Semiconductor Device) with List-II (Symbol Used) and select the correct answer using the codes given below the lists:
List-I
A) n-p-n transistor
B) SCR
C) FET
D) MOSFET
List-II
1) .

2)

3)

4)

A MOSFET device has both n+-type source and drain, and the drain current flows only when gate to source voltage exceeds +2.0 V. Which of the following conclusions can be drawn about the device?
1) The device is an n-channel MOSFET
2) It is enhancement type MOSFET
3) It has threshold voltage of value + 2.0 V
4) The channel conductance is determined by hole mobility
Select the correct answer using the code given below:

Assertion (A): The graded base BJTs exhibit better high frequency response characteristic as compared to their uniform base counterparts. Reason (R): There exists a built-in electric field in the base region of the graded base BJT which is absent in case of uniform base counterparts.

How is an N-channel Junction Field Effect Transistor operated as an amplifier?

In a MOSFET, the transfer characteristics can be used to determine which of the following device parameters:

The data sheet for a certain JFET (Junction Field Effect Transistor) indicates that I_DSS (drain to source current with gate shorted) =15 mA and V_{GS (off)} (Cut-off value of gate to source voltage) = -5 V. What is the drain current for V_GS =- 2V?

Which one of the following statements is correct for MOSFETS?