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GATE EC : Electronic Devices & Circuits Champion Quiz 2
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Question 1
Under low level injection assumption, the injected minority carrier current for an extrinsic semiconductor is essentially the
Question 2
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
Question 3
Drift current in semiconductors depends upon
Question 4
The ratio of the mobility to the diffusion coefficient in a semiconductor has
Question 5
A resistance of 5 ohms is further drawn so that its length becomes double. Its resistance will now be
Question 6
A dc voltage of 10 V is applied across an n-type silicon bar having a rectangular cross-section and a length of 1 cm as shown in figure. The donor doping concentration ND and the mobility of electrons 
are 1016 cm-3 and 1000 cm2V–1s–1, respectively. The average time (in μs) taken by the electrons to move from one end of the bar to other end is__________
are 1016 cm-3 and 1000 cm2V–1s–1, respectively. The average time (in μs) taken by the electrons to move from one end of the bar to other end is__________ Question 7
A lossy open stub having a length of 1/32 wavelength, is approximately equivalent to
Question 8
The electron concentration in a sample of uniformly doped n-type silicon at 300 K varies linearly from 1017/cm3 to at x = 0 to 6 × 1016 /cm3 at x = 2 µm. Assume a situation that electrons are supplied to keep this concentration gradient constant with time. If the electronic charge is 1.6 × 10-19 coulomb and the diffusion constant Dn = 35 cm2/s, the current density in the silicon if no electric field is present?
Question 9
Ampere's law relates
Question 10
Assume that Vi = 2V; R3 = 10Ω; 
of Q1 = 50; Vcc = 15V.
Find Iout.
of Q1 = 50; Vcc = 15V. Find Iout.
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Feb 11ESE & GATE EC
