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ESE EC : Electronic Devices & Circuits Champion Quiz 5
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Question 1
Match List-I (Isolation Technique in IC) with List-II (Related Characteristic) and select the correct answer using the codes given below the lists:
List-I
A) Reverse bias p-n junction isolation
B) Resistive isolation using the bulk resistivity of the layer
C) Native oxide isolation
D) Oxide (other than native isolation)
List-II
1) Requires large area of the wafer, thereby increasing the IC size
2) Best choice for silicon ICs with low parasitic capacitance
3) Suitable for ICs of III-V semiconductors
4) Introduces bias-dependent parasitic capacitance
List-I
A) Reverse bias p-n junction isolation
B) Resistive isolation using the bulk resistivity of the layer
C) Native oxide isolation
D) Oxide (other than native isolation)
List-II
1) Requires large area of the wafer, thereby increasing the IC size
2) Best choice for silicon ICs with low parasitic capacitance
3) Suitable for ICs of III-V semiconductors
4) Introduces bias-dependent parasitic capacitance
Question 2
The basic function of buried n+ layer in an n-p-n transistor in IC is to
Question 3
Which one of the statements concerning IC fabrication is not correct?
Question 4
Assertion (A): An IC is more reliable as compared to its discrete circuit equivalent.
Reason (R): All the joints in an IC are soldered simultaneously.
Reason (R): All the joints in an IC are soldered simultaneously.
Question 5
Assertion (A): The resistors and capacitors fabricated using IC technology have poor tolerances with respect to their absolute values. Reason (R): As all the components of the IC are fabricated simultaneously, their ratio of tolerances is very low.
Question 6
Which of the following capacitors are made use of widely for a capacitance application in monolithic ICs.
1) MOS capacitor
2) Collector Substrate capacitor
3) Collector-Base capacitor
4) Base -Emitter capacitor
Select the correct answer using the code given below:
1) MOS capacitor
2) Collector Substrate capacitor
3) Collector-Base capacitor
4) Base -Emitter capacitor
Select the correct answer using the code given below:
Question 7
The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single crystal structure is called
Question 8
The maximum concentration of the element which can be dissolved in solid silicon at a given temperature is termed as
Question 9
Assertion (A): Si is mainly used for making ICs and not Ge.
Reason (R): In Si, SiO2 layer which acts as an insulator can be formed for isolation purposes.
Corresponding oxide layer cannot be formed in Ge.
Reason (R): In Si, SiO2 layer which acts as an insulator can be formed for isolation purposes.
Corresponding oxide layer cannot be formed in Ge.
Question 10
The p-type epitaxial layer grown over an n-type substrate for fabricating a bipolar transistor will funct1on as
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Jun 10ESE & GATE EC
