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ESE EC : Electronic Devices & Circuits Champion Quiz 2
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Question 1
An intrinsic semiconductor has the following properties:
1) Its electron concentration equals its hole concentration.
2) Its carrier density increases with temperature.
3) Its conductivity decreases with temperature.
Which of these statements are correct?
1) Its electron concentration equals its hole concentration.
2) Its carrier density increases with temperature.
3) Its conductivity decreases with temperature.
Which of these statements are correct?
Question 2
An electric field is applied to a semiconductor. Let the number of charge carrier be n and the average drift speed be v. If the temperature is increased then
Question 3
A p-type silicon sample has an instrinsic carrier concentration of 
and a hole concentration of 
. Then the electron concentration is
and a hole concentration of . Then the electron concentration is Question 4
The majority carriers in an n-type semiconductor have an average drift velocity Vd in a direction perpendicular to a uniform magnetic field B. The electric field E induced due to Hall Effect acts in the direction
Question 5
The intrinsic concentration in a semi-conductor at 300K is 1013 cm-3. When it is doped with donor type impurities, the majority carrier concentration becomes 
. What is the value of its minority carrier density?
. What is the value of its minority carrier density? Question 6
Two pure specimen of a semiconductor material are taken. One is doped with 
number of donors and the other is doped with 
number of acceptors. The minority carrier density in the first specimen is 
. What is the minority carrier density in the other specimen?
number of donors and the other is doped with number of acceptors. The minority carrier density in the first specimen is . What is the minority carrier density in the other specimen? Question 7
Match List-I (Material) with List-II (Carrier Concentration/m3) and select the correct answer using the codes given below the lists:
List-II
A) Intrinsic semiconductor
B) Insulator
C) Extrinsic semiconductor
D) Conductor
List-II
1) 1028
2) 1022
3) 1018
4) 1014
List-II
A) Intrinsic semiconductor
B) Insulator
C) Extrinsic semiconductor
D) Conductor
List-II
1) 1028
2) 1022
3) 1018
4) 1014
Question 8
For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilities. As a result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?
Question 9
Assertion (A): A heavily doped semiconductor can exhibit positive temperature coefficient of resistance.
Reason (R): The carrier mobility decreases with an increase of temperature.
Reason (R): The carrier mobility decreases with an increase of temperature.
Question 10
Which one of the following expressions may be used to correctly describe the temperature (T) variation of the intrinsic carrier density (ni) of a semiconductor?Eg is the band gap, A is pre-factor, k is Boltzmann constant.
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May 17ESE & GATE EC
