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ESE EC : Electronic Devices & Circuits Champion Quiz 3
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Question 1
Assuming that the electron mobility in intrinsic silicon is 1500 cm2/Vs at room temperature (T = 300K) and the corresponding ‘volt equivalent of temperature’ 
mV, what is the approximate value of the electron diffusion constant?
mV, what is the approximate value of the electron diffusion constant? Question 2
Consider the following statements for a photoconducting material:
1) Its dark conductivity is small.
2) With the absorption of radiation, equal numbers of electrons and of holes are produced.
Which of the statement(s) given above is/are correct?
1) Its dark conductivity is small.
2) With the absorption of radiation, equal numbers of electrons and of holes are produced.
Which of the statement(s) given above is/are correct?
Question 3
Consider the following statements:
n-type of silicon can be
1) formed by adding impurity of phos- phorous
2) formed by adding impurity of arsenic
3) formed by adding impurity of boron
4) formed by adding impurity of aluminium
Which of the statements given above are correct?
n-type of silicon can be
1) formed by adding impurity of phos- phorous
2) formed by adding impurity of arsenic
3) formed by adding impurity of boron
4) formed by adding impurity of aluminium
Which of the statements given above are correct?
Question 4
The doping concentration on the n-side of a p-n junction diode is enhanced. Which one of the following will get affected?
Question 5
The junction capacitance of a linearly graded pn-junction (with applied voltage = VB) is proportional to
Question 6
Consider the following statements :
1) Acceptor level is formed very close to the conduction band.
2) The effective mass of the free electron is same as that of a hole.
3) The magnitude of the charge of a free electron is same as that of a hole.
4) Addition of donor impurities adds holes to the semiconductor.
Which of the above statements are correct?
1) Acceptor level is formed very close to the conduction band.
2) The effective mass of the free electron is same as that of a hole.
3) The magnitude of the charge of a free electron is same as that of a hole.
4) Addition of donor impurities adds holes to the semiconductor.
Which of the above statements are correct?
Question 7
Diffusion current of holes in a semiconductor is proportional to (with p = concentration of holes/unit volume)p
Question 8
As per Hall effect, if any specimen carrying a current I is placed in transverse magnetic field B, then an electric field E is induced in the specimen in the direction
Question 9
Which of the following quantities cannot be measured/determined using Hall effect?
Question 10
Atomic number of silicon is
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Mar 5ESE & GATE EC
