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ESE EE : Analog Electronics - National Champion Test
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Question 1
Which one of the following oscillators is well suited for the generation of wide range of audio-frequency sine waves?
Question 2
Match List- I (Electronic Circuit) with List- II (Characteristic) and select the correct answer using the code given below the lists.
List I
A) CE
B) CB
C) CC
D) Darlington pair
List II
1) The circuit introduces a phase inversion of 1800.
2) The circuit is rarely used.
3) The name, emitter follower is also used for the circuit
4) The circuit consists of two circuits connected in cascade.
List I
A) CE
B) CB
C) CC
D) Darlington pair
List II
1) The circuit introduces a phase inversion of 1800.
2) The circuit is rarely used.
3) The name, emitter follower is also used for the circuit
4) The circuit consists of two circuits connected in cascade.
Question 3
A feedback amplifier has an open loop gain of –100 if 4% of the output is fed back in a degenerative loop, what is the closed loop gain of the amplifier?
Question 4
A negative-feedback closed-loop system is supplied to an input of V. The system has a forward gain of 1 and a feedback gain of 1. What is the output voltage?. Assume input voltage is 5 V.
Question 5
Match List-I (Type of Amplifier) with List-II (Property) and select the correct answer using the code given below the lists :
List- I
A) Single ended class A
B) Class AB push-pull
C) Class B push- pull
D) Class C
List-II
1) Medium efficiency with minimum distortion.
2) High efficiency with crossover distortion.
3) Harmonic generator with highest possible conversion efficiency.
4) Poor conversion efficiency with minimum distorting.
List- I
A) Single ended class A
B) Class AB push-pull
C) Class B push- pull
D) Class C
List-II
1) Medium efficiency with minimum distortion.
2) High efficiency with crossover distortion.
3) Harmonic generator with highest possible conversion efficiency.
4) Poor conversion efficiency with minimum distorting.
Question 6
Which oscillator is characterized by a split capacitor in its tank circuit?
Question 7
Consider the following statements. Bias stabilization in a BJT circuit is very important because it.
1) provides high voltage and current gain.
2) ensures large bandwidth of the amplifier.
3) keeps the operating point unchanged with change of temperature.
Which of the above statement (s) is/are correct?
1) provides high voltage and current gain.
2) ensures large bandwidth of the amplifier.
3) keeps the operating point unchanged with change of temperature.
Which of the above statement (s) is/are correct?
Question 8
The circuit shown is
Question 9
For the below circuit what will be the output for the sinusoidal input shown at the input terminal?
Question 10
Statement (I): An ideal op-amp should have infinite bandwidth.
Statement(II): An ideal op amp should have infinite input resistance and zero output resistance.
Statement(II): An ideal op amp should have infinite input resistance and zero output resistance.
Question 11
A two stage amplifier with negative feedback
Question 12
An amplifier circuit has an overall current gain of -100 and an input resistance of 10 kΩ with a load resistance of 1 kΩ. The overall voltage gain of the amplifier is
Question 13
In a voltage-series-feedback amplifier with open loop gain AV and the feedback factor β, the input resistance becomes
Question 14
One shot multi-vibrator, with a pulse input gives an output:
Question 15
Assertion (A): Emitter coupled oscillator is capable of high frequency operation
Reason (R): It consists of saturating NPN BJTs.
Reason (R): It consists of saturating NPN BJTs.
Question 16
In a p- type silicon sample, the hole concentration is 2.251015/cc. If the intrinsic carrier concentration is 1.5 1010/cc, what is the electron concentration in the p-type silicon sample
Question 17
Assertion (A): The energy band diagram of a real semiconductor can not be represented by flat conduction and valence bands.
Reason (R): The presence of energy states in the forbidden energy gap results in carrier trapping, giving rise to finite curvature in the bands.
Reason (R): The presence of energy states in the forbidden energy gap results in carrier trapping, giving rise to finite curvature in the bands.
Question 18
For a circuit shown in figures given below, assumes . The transistor is in
Question 19
In the circuit given below if the output is taken from point E instead of node C, what will be the results?
Question 20
A transistor has a maximum power dissipation limit of 300 mW for ambient temperature3 up to 250 C. If the maximum allowable junction temperature is 1750C, then what is the limit of the device in an ambient temperature of 550C?
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