GATE EE : Analog Electronics - National Champion Test for ESE & GATE EE Exams

Question 1

When a bipolar junction transistor is operating in the saturation mode, which one of the following statements is TRUE about the state of its collector-base (CB) and the base-emitter (BE) junctions?

Question 2

Calculate the Q-point values (I_C and V_CE) for this circuit ?

Question 3

The common emitter forward current gain of the transistor shown is

.

The transistor is operating in

Question 4

Assume that the N-channel MOSFET shown in the following figure is ideal, and its threshold voltage is +1.0V. The voltage V_ab between nodes a and b is:

Question 5

What are the states of the three ideal diodes of the circuit shown in figure?

Question 6

The forward resistance of the diode shown in the following figure is 5 and the remaining parameters are same as those of an ideal diode. The dc component of the source current is
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Question 7

The operational amplifier shown in the figure is ideal. The input voltage (in Volt) is

. The amplitude of the output voltage V₀ (in Volt) is _____.

Question 8

The operational amplifier shown in the figure is ideal. The input voltage (in Volt) is

. The amplitude of the output voltage V₀ (in Volt) is _____.

Question 9

Which statement is correct in case of ideal OPAMP?

Question 10

An op-amp has an open-loop gain of 10⁵ and an open-loop upper cutoff frequency of 10 Hz. If this op-amp is connected as an amplifier with a closed-loop gain of 100, then the new upper cutoff frequency is

Question 11

The block diagrams of two types of half wave rectifiers are shown in the figure. The transfer characteristics of the rectifiers are also shown within the block.

It is desired to make full wave rectifier using above two half-wave rectifiers. The resultant circuit will be

Question 12

In an NMOS circuit, V_t = 4 V and V_GS ranges from 7.5 to 10 V. The channel to be continuous, finds the largest value of V_DS?

Question 13

A common emitter silicon transistor amplifier with quiescent emitter current as 1mA, what will be the base biasing voltage?

Question 14

The circuit shown in below, is equivalent to a load of

Question 15

In the circuit shown in Figure, the current gain (β) of the ideal transistor is 10. The operating point of the transistor (V_cc, I_c) is

Question 16

For the n–channel enhancement MOSFET shown in Figure below, the threshold voltage V_th= 2 V. The rain current I_D of the MOSFET is 4 mA when the drain resistance R_D is 1 kΩ. If the value of R_D is increased to 4 Ω, drain current I_D will become