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ISRO EC Quiz 2 : Electronic Devices & Circuits

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Question 1

The primary reason for the widespread use of Silicon in semiconductor device technology is

Question 2

Electron mobility of the following intrinsic elements in descending order is :

Question 3

Which of the following is true?

Question 4

Consider an abrupt p-junction. Let V_bi be the built-in potential of this junction and V_R be the applied reverse bias. If the junction capacitance (C₁) is 1 pF for V_bi + V_R = 1V, then for V_bi + V_R = 4V, C_j will be

Question 5

If n number of MOSFETs with identical W/L are connected in series, then equivalent W/L is given by:

Question 6

For the circuit shown below, assume that the zener diode is ideal with a breakdown voltage of 6 Volts. The waveform observed across R is:

Question 7

A power MOSFET is a

Question 8

The electron and hole concentrations in an intrinsic semiconductor are n_i per cm³ at 300 K. Now, if acceptor impurities are introduced with a concentration of N_A per cm³ (where N_A>>n_i), the electron concentration per cm³ at 300 K will be:

Question 9

The source of a silicon (n_i = 10¹⁰ per cm³) n-channel MOS transistor has an area of 1 sq μm and a depth of 1 μm. If the dopant density in the source is 10¹⁹/cm³, the number of holes in the source region with the above volume is approximately

Question 10

A square pulse of 3 volts amplitude is applied to C-R circuit shown in figure. The capacitor is initially uncharged. The output voltage v₀ at time t = 2 sec is

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ESE & GATE EC Electronic Devices and Circuits

Jun 5ESE & GATE EC