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GATE EC 2018 Exam: Electronic Devices & Circuits Quiz 1

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Question 1

The primary reason for the widespread use of Silicon in semiconductor device technology is

Question 2

A silicon sample is uniformly doped with donor type impurities with a concentration of 10¹⁶ /cm³. The electron and hole mobilities in the sample are 1200 cm²/V-s and 400 cm² /V-s respectively.
Assume complete ionization of impurities. The charge of an electron is 1.6 × 10^–19 C. The resistivity of the sample (in Ω-cm) is _________.

Question 3

Electron mobility of the following intrinsic elements in descending order is :

Question 4

The band gap of Silicon at room temperature is:

Question 5

n–type silicon is obtained by doping silicon with

Question 6

A Silicon sample A is doped with 10¹⁸ atoms/cm³ pf Boron. Another sample B of identical dimensions is doped with 10¹⁸ atoms/cm³ of phosphorus. The ratio of electron to hole mobility is 3. The ratio of conductivity of the sample A to B is

Question 7

The longest wavelength that can be absorbed by silicon, which has the bandgap of 1.12eV, is 1.1μm. If the longest wavelength that can be absorbed by another material is 0.87μm, then the bandgap of this material is

Question 8

In the circuit shown below, the silicon npn transistor Q has a very high value of β. The required value of R₂ in k Ω to produce I_C = 1 mA is

Question 9

The electrical conductivity of a semiconductor increases when a radiation of a wavelength shorter than 1000 nm is incident on it. The band gap of the semiconductor is :

Question 10

For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilities. As a result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?

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ESE & GATE EC Electronic Devices and Circuits

May 17ESE & GATE EC