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GATE EC 2018 Exam: Electronic Devices & Circuits Quiz 2
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Question 1
A Silicon PN Junction at a temperature of 20 °C has a reverse saturation current of 10 pic-Amperes (pA). the reverse saturation current at 40 °C for the same bias is approximately
Question 2
The doping concentrations on the p-side and n-side of a silicon diode are 1 × 1016 cm-3 and 1 × 1017 cm-3, respectively. A forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon ni = 1.5 × 1010 cm-3 and 
The electron concentration at the edge of the depletion region on the p-side is
The electron concentration at the edge of the depletion region on the p-side isQuestion 3
In the circuit shown, assume that diodes D1 and D2 are ideal. In the steady state condition, the average voltage Vab (in Volts) across the 0.5 μF capacitor is _______.
Question 4
The i–v characteristics of the diode in the circuit given below are
The current in the circuit is
The current in the circuit is
Question 5
Which of the following is NOT associated with a p-n junction?
Question 6
Consider an abrupt p-junction. Let Vbi be the built-in potential of this junction and VR be the applied reverse bias. If the junction capacitance (C1) is 1 pF for Vbi + VR = 1V, then for Vbi + VR = 4V, Cj will be
Question 7
Group I lists four types of p-n junction diodes. Match each device in Group I with one of the option in Group II to indicate the bias condition of that device in its normal mode of operation.
Question 8
The source of a silicon (ni = 1010 per cm3) n-channel MOS transistor has an area of 1 sq μm and a depth of 1 μm. If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
Question 9
A square pulse of 3 volts amplitude is applied to C-R circuit shown in figure. The capacitor is initially uncharged. The output voltage v0 at time t = 2 sec is
Question 10
A Silicon PN junction diode under reverse bias has depletion region of with 10 µm. The relative permittivity of Silicon, εr = 11.7 and the permittivity of free space ε0 = 8.85 × 10-12 F/m. the depletion capacitance of the diode per square meter is
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