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GATE EC 2018 Exam: Electronic Devices & Circuits Quiz 4

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Question 1

The value of transconductance “gm” for FET is given by

Question 2

Which of the following can be used for the representation of n-channel enhancement type MOSFET?

Question 3

For an n–channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. V_SB> 0), the threshold voltage V_T of the MOSFET will

Question 4

If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to

Question 5

A depletion type N-channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage V_TH = -0.5 V, V_GS = 2.0 V, V_DS = 5 V, W/L = 100, C_ox = 10^-8 F/cm² and µ_n = 800 cm²/V-s. The value of the resistance of the voltage controlled resistor (in Ω) is __________.

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ESE & GATE EC Electronic Devices and Circuits

Sep 19ESE & GATE EC