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GATE EC 2018 Exam: Electronic Devices & Circuits Quiz 3

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Question 1

For a BJT, the common – base current gain 𝛼 = 0.98 and the collector-base junction reverse bias saturation current 𝐼_𝐶0 = 0.6𝜇𝐴. This BJT is connected in the common emitter mode and operated in the active region with a base drive current 𝐼_𝐵 = 20𝜇𝐴. The collector current 𝐼_𝐶 for this mode of operation is.

Question 2

For the BJT Q₁ in the circuit shown below, β = ∞, V_BEon = 0.7 V, V_CEsat = 0.7 V. The switch is initially closed. At time t = 0, the switch is opened. The time t at which Q₁ leaves the active region is

Question 3

The transistors used in a portion of the TTL gate shown in figure have β =100. The base-emitter voltage of is 0.7V for a transistor in active region and 0.75V for a transistor in saturation. If the sink current I =1mA and the output is at logic 0, then the current I_R will be equal to
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Question 4

For an npn transistor connected as shown in figure, V_BE = 0.7 Volts. Given that reverse saturation current of the junction at room temperature 300 °K is 10^-13 A, the emitter current is

Question 5

In a uniformly doped BJT, assume that N_E, N_B and N_C are the emitter, base and collector dopings in atoms/cm³, respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following conditions is TRUE?

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ESE & GATE EC Electronic Devices and Circuits

Nov 28ESE & GATE EC