All India SSC JE 2017 Electrical Engineering - Quiz 21

An emitter in a bipolar junction transistor is doped much more heavily than the base as it increases the

Assertion (A): The energy band diagram of a real semiconductor can not be represented by flat conduction and valence bands.
Reason (R): The presence of energy states in the forbidden energy gap results in carrier trapping, giving rise to finite curvature in the bands.

What are the states of the three ideal diodes in the circuit as shown below?

The concentration of minority carriers in an extrinsic semiconductors under equilibrium is

Match list-I (Parameter) with Liat-II (Variation) and select the correct answer using the code given below the lists:
List-I
A) Electron mobility around room temperature
B) Energy gap
C) Intrinsic carrier concentration
D) Mole density (gm/mole)
List-II
1) Increase with temperature
2) Decrease with temperature
3) Remains constant as temperature is varied