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ESE EC 2018 Achiever Study Plan: Advanced Electronics Quiz 3
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Question 1
Consider the following statements:
1) Two identical 2nd order Butterworth LP filters when connected in cascade will make a 4th order Butterworth HP filter.
2) A high 2nd order filter will exhibit a peak if Q exceeds certain value.
3) A band pass filter cannot be of order one.
4) A network consists of an amplifier of real gain A and a β network in cascade with each other. The network will generate sinusoidal oscillations if the β network is a first order LP filter.
Which of the above statements are correct?
1) Two identical 2nd order Butterworth LP filters when connected in cascade will make a 4th order Butterworth HP filter.
2) A high 2nd order filter will exhibit a peak if Q exceeds certain value.
3) A band pass filter cannot be of order one.
4) A network consists of an amplifier of real gain A and a β network in cascade with each other. The network will generate sinusoidal oscillations if the β network is a first order LP filter.
Which of the above statements are correct?
Question 2
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
Question 3
In a sequential circuit, the output at any instant of time depends.
Question 4
Consider the following statements:
The 8259A Programmable Interrupt Controller an
1) manage eight interrupts
2) vector an interrupt request anywhere in the memory map
3) have 8-bit or 16-bit interval between interrupt vector locations
4) be initialized with operational command words
Which of the above statements are correct?
The 8259A Programmable Interrupt Controller an
1) manage eight interrupts
2) vector an interrupt request anywhere in the memory map
3) have 8-bit or 16-bit interval between interrupt vector locations
4) be initialized with operational command words
Which of the above statements are correct?
Question 5
Statement (I): Concentration of acceptor atoms in the region between isolation islands m a monolithic integrated circuit will be much higher than in the p-type substrate.
Statement (II): The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending 1nto the p+-type material.
Statement (II): The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending 1nto the p+-type material.
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Feb 25ESE & GATE EC
