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GATE Electronics 2018: Section Test
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Question 1
A function is given by . Which of the following is true?
Question 2
The RC circuit shown in the figure is
Question 3
A silicon wafer has 100 nm of oxide on it and is inserted in a furnace at a temperature above 1000ºC for further oxidation in dry oxygen. The oxidation rate
Question 4
For a Hertz dipole antenna, the half power beam width (HPBW) in the E-plane is
Question 5
In the following circuit, the switch S is closed at t = 0. The rate of change of current is given by
Question 6
Group 1 gives two possible choices for the impedance Z in the diagram. The circuit elements in Z satisfy the condition R2C2 > R1C1. The transfer function represents a kind of controller. Match the impedances in Group I with the types of controllers in Group II.
Group-I
Q.
R.
Group-II
1. PID controller
2. Lead compensator
3. Lag compensator
Group-I
Q.
R.
Group-II
1. PID controller
2. Lead compensator
3. Lag compensator
Question 7
A message signal given by
Is amplitude modulated with a carrier of frequency to generate.
What is the power efficiency achieved by this modulation scheme?
Is amplitude modulated with a carrier of frequency to generate.
What is the power efficiency achieved by this modulation scheme?
Question 8
Four messages band limited to W, W, 2W and 3W respectively are to be multiplexed using Time Division Multiplexing (TDM). The minimum bandwidth required for transmission of this TDM signal is
Question 9
An astable multivibrator circuit using IC 555 timer is shown below. Assume that the circuit is oscillating steadily
The voltage VC across the capacitor varies between
The voltage VC across the capacitor varies between
Question 10
The 4-point Discrete Fourier Transform (DFT) of a discrete time sequence {1, 0, 2, 3} is
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