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ESE EC 2018 Achiever Study Plan: Week 7 Champion Quiz

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Question 1

As compared to a BJT amplifier, an amplifier made using a JFET is likely to have

Question 2

Which of the following is true for an NMOS transistor operating in linear region?

Question 3

A high gain MESFET packaged device of cast-to-channel thermal resistance of the device is provides 8 W RF output power taking 20 W DC power. What will be the channel temperature of the device if the case temperature of the device maintained at ?

Question 4

Consider a single stage tuned amplifier having 3dB bandwidth of 100 kHz. Determine the bandwidth if two such single stage tuned amplifiers are cascaded.

Question 5

It is required to design a class B output stage (as shown below) to deliver an average output power of 12.5W to a load of 4Ω. The power supply is selected so that Vcc is 5V greater than the peak output voltage. Determine the power conversion efficiency, of the circuit.

Question 6

A CMOS Inverter is shown below in the figure. For which one of the following is true if the threshold voltage of the NMOS transistor is 1 V and that of PMOS transistor is -1 V.

Question 7

The four basic elements in a PLL are loop filter, loop amplifier, VCO and

Question 8

Consider the following statements in respect of the Wien bridge oscillator shown in the figure below:

1) For R = 1 kilo-ohm
C =
2) For R =3 kiloohms
C =
Which of these statements is/are correct?

Question 9

Statement (I) : A push-pull amplifier gives more output per active device for a given amount of distortion.
Statement (II) : Even harmonics are absent in the output of a push-pull amplifier.

Question 10

Assertion (A) : For class A operation of CE transistor amplifier, the operating point cannot be fixed near VCE = 0 point.
Reason (R) : During the positive hall of the input cycle, the transistor may be driven from active region to saturation region thus loosing the class A wave shape in the output.
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Jun 15ESE & GATE EC