ECIL GET 2017 Recruitment: Electronics (Analog Circuits) Quiz 11

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Question 1

A Si transistor with V_BE(sat) = 0.8 V, β = h_fe = 100, V_CE(sat) = 0.2V is used in the circuit shown. Find the minimum value of R_C in kilohm for which the transistor remains in saturation.

• A4.6
• B3.2
• C2.5
• D3.7

Question 2

In VLSI n-MOS process, the thinox mask

• Apatterns the ion implantation within the thinox region
• Bdeposits polysilicon all over the thinox region
• Cpatterns thickox regions to expose silicon where source, drain or gate areas are required
• Dgrows thickox over thinox regions in gate areas

Question 3

Which of the following regions of operation are mainly responsible for heating of the transistor under switching operation?
1) Saturation region
2) Cut-off region
3) Transition from saturation to cut-off
4) Transition from cut-off to saturation
Select the correct answer using the codes given below

• A1, 2, and 4 only
• B1, 3, and 4 only
• C2 and 3 only
• D1 and 3 only

Question 4

The transient response rise time (unity gain) of an Op-Amp is 0.05μS The small signal bandwidth is

• A7 kHz
• B20 kHz
• C7 MHz
• D20 MHz

Question 5

Which among the following OPAMP circuit is used as line driver?

• A
• B
• C
• D

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