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GATE EC: 2018 Mini Mock 1

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Question 1

As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentration of N _D1=10¹⁴ cm⁻³ and N_D2=10¹⁶cm^-³ in the n-regions of the diodes, and uniform acceptor doping concentration of N _A1=10¹⁴ cm⁻³ and N_A2=10¹⁶cm^-³ in the p- regions of the diodes, respectively. Assuming that the reverse bias voltage is >> built-in potentials of the diodes, the ratio C ₂ C₁ of their reverse bias capacitances for the same applied reverse bias, is _______.

Question 2

The electric field vector of a uniform plane wave propagating in a nonmagnetic and lossless medium is given by

The relative permittivity of the medium is ______.

Question 3

Consider

silicon diode at

. The slope of the diffusion capacitance versus forward bias current is

. The hole lifetime is _______

.
(Assume forward bias current

)

Question 4

Find the voltage

in the given network.

Question 5

Consider the logic circuit given below

Expression for output Y is

Question 6

For the common-base circuit shown below

The small signal voltage gain

Question 7

Consider the circuit given below

The circuit was in rest with switch k is opened. At t = 0, the switch is closed. The current I_c(t) is

Question 8

Consider a 6-bit digital ramp type ADC with a clock frequency 1 MHz. The full scale output of the ADC is for an input analog voltage 10.2 V. If input voltage given to the ADC is 3.5 V then conversion time to reach the desired binary output is ____

Question 9

In the circuit shown below,

If I_C =1mA and the value of

and

then the value of the lower 3-dB frequency is ______ Hz. (Assume

)

Question 10

If a control system of 2^nd order is subject to a unit step and the value of damping ratio (ξ) = 0.49 and natural frequency, ω_n= 7 rad/sec, then what will be the delay time (t_d) and setting time (t_s) respectively.

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