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GATE EC:2018 Mini Mock 2

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Question 1

A modulated wave s(t) = [ 1 + m(t) ] cos(2π t) is applied to the system shown:

m(t) is band limited to 1 kHz and |m(t)|< 1. The low pass filter is ideal with pass band magnitude of 1 and cutoff frequency of 3 kHz. The output y(t) is equal to

Question 2

Consider an rectangular waveguide filled with lossless dielectric operating at 4 GHz. It the guide phase constant is 50 ° per cm, then the critical wave number is ______ rad/m.

Question 3

Given Figure shows a silicon transistor connected as a common emitter amplifier. The quiescent collector voltage of the circuit is approx.(

Question 4

What is the rise time () of a 2nd order system if damping ratio (ξ) = 0.40 and natural frequency () =2 rad/sec?

Question 5

In a AM signal, received signal power is with a maximum modulating signal of 5kHz.The noise spectral density at the receiver input is .If noise power is restricted to the message signal bandwidth only then signal-to-noise ratio at the input to the receiver is_______ (dB)

Question 6

The contents of some memory location of an 8085 P based system are shown

The program is as follows
LXI H 3000H
MOV E, M
INX H
MOV D, M
LDAX D
MOV L, A
INX D
LDAX D
MOV H, A
The contents if HL pair after the execution of the program will be:-

Question 7

consider the circuit below with initial state Q0 = 1, Q1 = Q2 = 0. The state of the circuit is given by the value of 4Q2 + 2Q1 + Q0
   
which one of the following is the correct state sequence of the circuit?

Question 8

A radio link has a 50 W transmitter connected to an antenna of 4 m2 effective aperture at 6 GHz. The receiving antenna has an effective aperture of 0.25 m2 and is located at a 20 km line of sight distance from the transmitting antenna. Assume lossless, matched antennas, the power delivered to the received is______

Question 9

A semiconductor is exposed to radiation in such a way that the carriers are uniformly generated uniformly all over its volume. The semiconductor is p-type with NA= 1017/cm3. If the added hole concentration in stable state is given as 1013 /cm3 and if minority carrier lifetime= 100 µ sec. The generation rate due to radiation is

Question 10

The transconductance of a FET used in an amplifier circuit is 4000 micro-siemens. The load resistance is 15kΩ and drain circuit resistance is 10 MΩ. Calculate the voltage gain of the amplifier circuit.
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Jun 7ESE & GATE EC