Subject Revision:Electronics Devices & Circuits Quiz

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Question 1

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, N_A/N_D and the width of base W?

• Aβ increases with increase in N_A/N_D, β increases with increase in W
• Bβ increases with decrease in N_A/N_D, β increases with increase in W
• Cβ increases with decrease in N_A/N_D, β increases with decrease in W
• Dβ increases with increase in N_A/N_D, β increases with decrease in W

Question 2

Determine V_DS. I_DSS= 1mA, Vp = -5V

• A20.7 V
• B1.9 V
• C0.19 V
• D8.64 V

Question 3

Consider an n⁺ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let N_d = 10¹⁵ cm^-3, t_ox =, and . What will be the flat-band voltage? If

• A
• B
• C
• D

Question 4

Consider a p⁺-n silicon diode at T=300K with doping concentration of N_a = 10¹⁸ cm^-3 and N_d = 10¹⁶ cm^-3. The minority carrier hole diffusion coefficient is D_p = 12 cm²/s and the minority carrier hole lifetime is . The cross-sectional area is A = 10^-4cm². The diode current at a forward-bias voltage of 0.50V will be :

• A
• B
• C
• D

Question 5

Determine the output waveform of a series clipper with Vdc= 2 V and the input AC signal given as below (consider ideal diode)

• A
• B
• C
• D

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