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Solution for Live Quiz Session: Electronics Devices & Circuits-31 Jan

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Question 1

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

Question 2

Consider the following statements S₁ and S₂.
S₁ : The β of a bipolar transistor reduces if the base width is increased.
S₂ : The β of a bipolar transistor increases if the doping concentration in the base in increased
Which one of the following is correct?

Question 3

Introducing a resistor in the emitter of a common amplifier stabilizes the dc operating point against variations in

Question 4

When the gate–to–source voltage (V_GS) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current in observed to be 1 mA. Neglecting the channel width modulation effect and assuming that the MOSFET is operating at saturation, the drain current for an applied V_GS of 1400 mV is

Question 5

For an n–channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. V_SB> 0), the threshold voltage V_T of the MOSFET will

Question 6

For N-channel JFET with N_D=10¹⁹ atoms/cm³ and a=4 $Description: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image002.png$ cm. Then the value of |V_P| will be ____ V?

Question 7

Which of the following can be used for the representation of n-channel enhancement type MOSFET?

Question 8

Consider an n⁺ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let N_d = 10¹⁵ cm^-3, t_ox =

and

. What will be the flat-band voltage? If

Question 9

For an npn BJT transistor, how does the common-emitter current gain β depend on the relative dopings of the base region and the emitter region, N_A/N_D and the width of base W?

Question 10

For a p-n junction diode the doping concentration on the n-side is N_D = 10¹⁵ cm^-3 and the doping concentration on the p-side is N_A = 10¹⁴ cm^-3. The intrinsic carrier concentration of material used to form the diode is 10¹² cm^-3. The built in potential of the diode is
(Assume V_T = 25 mV)

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ESE & GATE EC Electronic Devices and Circuits

Jun 5ESE & GATE EC