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BARC ECE Mini Mock 1
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Question 1
Let 1 be a cube root of unity and S be the set of all non-singular matrices of the form where each of a, b and c is either or . Then the number of distinct matrices in the set S is
Question 2
Which of the following is the suitable response of the system s(n+2) – 3s(n+1)+2s(n) = δ(n), when all the initial conditions are zero?
Question 3
Find the bandwidth (in rad/s) of a parallel GLC resonant circuit whose transfer function is Z(s) = .
Question 4
A uniform plane wave in region 1 is normally incident on the planner boundary separating region 1 and 2. Both region are lossless and If the 20% of the energy in the incident wave is reflected at the boundary then ratio is
Question 5
With switch opened at t=0, find i(t).
Question 6
A source has alphabets {a, b, c, d} with corresponding probabilities {0.15, 0.2, 0.3, 0.35}. The minimum required average code word length to represent this source for error free reconstruction is
Question 7
How many half adder circuits are required to implement the four boolean functions.
D= A⊕B⊕C, where ⊕ is XOR gate.
E= A’BC +AB’C
F= ABC’ + (A’ + B’) C
G= ABC
Question 8
A silicon abrupt junction in thermal equilibrium at T=300K is doped such that in n-region and in the p-region. Consider Nc = and Na =
What will be the impurity doping concentrations Nd and Na in n and p-regions and the built-in potential barrier, Vbi in the p-n junction respectively?
What will be the impurity doping concentrations Nd and Na in n and p-regions and the built-in potential barrier, Vbi in the p-n junction respectively?
Question 9
Let X be the random variable. Consider the following table with the probability distribution values of X.
Find the value of P(X<4).Round upto two decimal places).
Find the value of P(X<4).Round upto two decimal places).
Question 10
Consider an n+ polysilicon-silicon dioxide n-type silicon MOS capacitor. Let Nd = 1015 cm-3, tox =, and . What will be the flat-band voltage? If
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ESE & GATE ECGeneralDec 26ESE & GATE EC