BARC 2018 EC-EDC Nuclear Quiz 3

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Question 1

Under the application of a bias in a typical p-n junction structure, the hole current contribution is less compare to electron current contribution. As a designer, what will you do to increase this hole current contribution than the electron contribution?

• Aincrease the p dopant concentration to double its existing value
• Breduce the n dopant concentration to half of its existing value
• Cincrease the n dopant concentration to double of its existing value
• D(a) and (b) both

Question 2

For an n-channel MOSFET and its transfer curve shown in figure, the threshold voltage is

• A1 V and the device is in active region.
• B–1 V and the device is in saturation region.
• C1 V and the device is in saturation region.
• D–1 V and the device is in active region.

Question 3

In the circuit shown below, capacitor C₁ and C₂ are very large and are shorts at the input frequency. v_i is a small signal input. The gain magnitude at 10 Mrad/s is

• AMaximum
• BMinimum
• CUnity
• DZero

Question 4

The current gain of a bipolar transistor drops at high frequencies because of

• Atransistor capacitances
• Bhigh current effects in the base
• Cparasitic inductive elements
• Dthe Early effect

Question 5

Determine V_DS. I_DSS= 1mA, Vp = -5V

• A20.7 V
• B1.9 V
• C0.19 V
• D8.64 V

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