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DMRC 2018 Electronics Engineering : Quiz 1

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Question 1

In a thyristor, di/dt protection is achieved by the use of

Question 2

Which one of the following is NOT a characteristic of CMOS configuration ?

Question 3

The vector statement of Guass's law is

Question 4

In a series resonant circuit, maximum voltage across L occurs at

Question 5

The transfer function of a system is (1-s) / (1+s). The system is then which one of the following?

Question 6

Electronic voltmeters which use reictifiers employ negative feedback. This is done

Question 7

In a Hall effect experiment, a p-type semiconductor sample with hole concentration P₁ is used. The measured value of the nHall voltage is V_H1. If the p-type sample is now replaced by another p-type sample with hole concentration p₂ where p₂=2p₁. What is the new Hall voltage V_H2?

Question 8

Number of address lines necessary to connect 8 K memory chip is

Question 9

A modern power semiconductor device that combines the characteristics of BJT and MOSFET is

Question 10

The internal resistance of a voltmeter should be very high in order to have

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ESE & GATE EC General

Feb 7ESE & GATE EC