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ISRO EC 2018:Electronics Devices & CIrcuits Booster Quiz 2
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Question 1
An NMOS transistor has Vto = 0.8V, 2Φf = 0.7V, body-effect parameter γ=0.4 V1/2 and VSB = 3V. Find the threshold voltage.
Question 2
Which of the following conditions represent triode region of a MOSFET?
Question 3
Which of the following diodes are forward biased?
i)
ii)
iii)
iv)
i)
ii)
iii)
iv)
Question 4
When a relatively small d.c. voltage is applied across a thin slice of Gallium Arsenide with thickness of order of few tenths of a micrometer and the voltage gradient across the slice is in excess of about 3300 V/cm, then the negative resistance will manifest itself. Which of the following devices operate based on the above phenomenon?
Question 5
Which of the following active devices are used in tuning circuits?
Question 6
Which of the following method is used to improve switching speed of a PN diode?
i) Length of P region is shortened.
ii) Length of N region is shortened.
iii) Bismuth dopants are used.
iv) Gold dopants are used.
i) Length of P region is shortened.
ii) Length of N region is shortened.
iii) Bismuth dopants are used.
iv) Gold dopants are used.
Question 7
In a p-n junction diode if the temperature is increased then
Question 8
In a transistor current gain 
approaches to unity when
approaches to unity when - 915 attempts
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Jun 22ESE & GATE EC
