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ISRO EC 2018:Electronics Devices & CIrcuits Booster Quiz 3
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Question 1
Which of the following expressions represent intrinsic concentration ni2?
Question 2
The typical value of diffusion constants in a silicon PN-diode are:
Question 3
Consider a region of silicon device of electrons and holes, with an ionized donor density of
. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points.
Given q =1.6 x10-19 coulomb,
for silicon, the value of L in nm is_____
. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points. Given q =1.6 x10-19 coulomb,
for silicon, the value of L in nm is_____Question 4
The current gain of a bipolar transistor drops at high frequencies because of
Question 5
The ratio of the mobility to the diffusion coefficient in a semiconductor has
Question 6
The concentration of minority carriers in an extrinsic semiconductor under equilibrium is:
Question 7
The electric field induced inside a semiconductor with a non-uniform doping of donar atoms and having the doping profile in one dimension is
I. Directly proportional to temperature
II. Directly proportional to doping profile
III. Directly proportional to the derivative of doping profile
IV. Inversely proportional to the doping Profile
Which of the following statements are correct.
I. Directly proportional to temperature
II. Directly proportional to doping profile
III. Directly proportional to the derivative of doping profile
IV. Inversely proportional to the doping Profile
Which of the following statements are correct.
Question 8
For a p-n junction, considering very long p and n regions, what will be the total number of excess electrons in the p-region?
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May 9ESE & GATE EC
