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UGC-NET 2018: (EDC & solid state) SpeedTest Quiz 2

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Question 1

If an electric field is applied to an n-type semiconductor bar, the electrons and holes move in opposite directions due to their opposite charges. The net current is
1. due to both electrons and holes with electrons as majority carriers.
2. the sum of electron and hole currents.
3. the difference between electron and hole currents.
Which of these statements is/are correct?

Question 2

List-I
a. Gunn diode
b. Solar cell
c. MOSFET
d. SCR
List-II
i. Junction less device
ii. Single junction device
iii. Triple junction device
iv. Double junction device

Question 3

In intrinsic semiconductor

Question 4

PN junction diode can be used as a/an

Question 5

Zener diode is a

Question 6

SCR turns off from conducting state to blocking state on

Question 7

Photoconductive devices are made of

Question 8

Consider the following statements regarding a semiconductor:
1. Acceptor level lies close to the valence band.
2. Donor level close to the valence band.
3. n-type semiconductor behaves as a conductor at zero Kelvin.
4. p-type semiconductor behaves as an insulator at zero Kelvin.

Question 9

The unit of mobility of semiconductor is

Question 10

When the optical power incident on a photodiode is

and the responsivity
is 0.8 A/W, the photocurrent generated (in

) is

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ESE & GATE EC Electronic Devices and Circuits

Jul 29ESE & GATE EC