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UGC-NET 2018: (EDC & solid state) SpeedTest Quiz 3

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Question 1

A transducer converts
1. A potential difference is developed across a current carrying metal strip when the strip is placed in transverse magnetic field.
2. The Hall effect is very weak in metals but large in semiconductors.
3. The Hall effect is very weak in semiconductors but is large in metals.
4. It is applied in the measurement of the magnetic field intensity.

Question 2

Which semiconductor device acts like a diode and two resistors?

Question 3

Semiconductor materials are made up of

Question 4

Th ceramic materials are_____.

Question 5

A small amount of phosphorus is added to silicon so that there are 2.5x10¹⁷conduction electrons per cubic meter and 9.0x10¹⁴holes per cubic meter. Let µ_n=0.13m²/V.s and µ_p=0.05m²/V.s. The resistivity in

-m will be?

Question 6

In metals, the thermal conductivity K and electrical conductivity σ are related as

L is known as

Question 7

The built-in potential (diffusion potential) in a p-n junction

Question 8

Determine the channel parameter k₀ of a MOSFET with the following specifications: mobility of channel carriers =1350 cm²/V; permittivity of metal oxide layer = 1.4x10^-10 F/m ; Thickness of metal oxide layer = 0.1μm ; width of channel = 300 μm ; length of channel = 25 μm.

Question 9

Which of the following property of MOSFET is used in Automatic Gain Control (AGC) circuit of a multi-stage amplifier?

Question 10

The I-V characteristics of three types of diodes at the room temperature, made of semiconductors X, Y and Z, are shown in the figure. Assume that the diodes are uniformly doped and identical in all respects except their materials. If EgX, EgY and EgZ are the band gaps of X, Y and Z, respectively, then
3.10.JPG

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ESE & GATE EC Electronic Devices and Circuits

Jun 10ESE & GATE EC