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Gate 2019: Electronic Devices and Circuits Quiz 6
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Question 1
If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to
Question 2
What should be the base width of a pnp transistor, with cutoff frequency fT=5GHz and DP=10cm2/s ?
Question 3
The value of transconductance “gm” for FET is given by
Question 4
In the given figure, β = 200. Calculate Zi.
Question 5
Assume 
=100 for each transistor, for quiescent condition 
=-4 V and 
=-6 V, the value of R is
=100 for each transistor, for quiescent condition =-4 V and =-6 V, the value of R is Question 6
In n-type silicon MOS structure a metal semiconductor work function difference of 
is required. If gate is n+ polysilicon, then required silicon doping required is
(Given ni= 1.5 x 1010 cm-3 , Eg =1.11eV)
is required. If gate is n+ polysilicon, then required silicon doping required is(Given ni= 1.5 x 1010 cm-3 , Eg =1.11eV)
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