Time Left - 12:00 mins

ESE 2019 Technical (Basic Electronics: Quiz 1)

Attempt now to get your rank among 839 students!

Question 1

A rolled-paper capacitor of value 0.02μF is to be constructed using two strips of aluminum of width 6 cm, and wax impregnated paper of thickness 0.06 mm whose relative permittivity is 3. The length of foil strips should be:

Question 2

The Hall-coefficient of a specimen of doped semiconductor is 3.06×10-4m3C-1 and the resistivity of the specimen is 6.93 ×10-3Ωm. The majority carrier mobility will be:

Question 3

In an extrinsic semiconductor, the conductivity significantly depends upon:

Question 4

Thermal run-away is not possible in FET because, as the temperature of FET increases

Question 5

What will be maximum wavelength of photons that is detected by photodiode having band gap of 4 eV?

Question 6

Statement (1): The resistance of a FET in non ­conducting region is very high.
Statement (II): The FET is semiconductor device.

Question 7

Statement (1): All passive components can be fabricated in a single chip.
Statement (II): As opposed to discrete circuits where all components are separately inserted and connected, in an integrated circuit, they are simultaneously created on a chip of semiconductor material during manufacturing.

Question 8

Consider the following statements with regard to semiconductors:
1) In n type material free electron concentration is nearly equal to density of donor atoms.
2) 1 part in 108 donor type impurity added to Ge improves its conductivity at 30oC by a factor 12.
3) Phosphorus is an example of n type impurity.
4) Conductivity of Si is more sensitive to temperature than Ge.
Which of these statements are correct?

Question 9

The position of the intrinsic Fermi level of an undoped semiconductor (EFi) is given by:

Question 10

Consider the following statements :
1) Acceptor level is formed very close to the conduction band.
2) The effective mass of the free electron is same as that of a hole.
3) The magnitude of the charge of a free electron is same as that of a hole.
4) Addition of donor impurities adds holes to the semiconductor.
Which of the above statements are correct?
  • 839 attempts
  • 5 upvotes
  • 6 comments
May 9ESE & GATE EC