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ESE 2019 Technical (Basic Electronics : Quiz 2 )

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Question 1

Which among the following materials have approximated common resistivity?
i. Silver and copper
ii. Gold and aluminium
iii. Iron and Platinum

Question 2

Statement (I): It is desired that the high frequency transistors should work at low collector currents for better high frequency performance.
Statement (II): The diffusion capacitance is directly proportional to the emitter current.

Question 3

If an input signal ranges from 20μA - 40μA with an output signal ranging from 0.5 mA - 1.5 mA, what is the βac?

Question 4

Statement (I): One of the mechanisms by which a transistor’s usefulness may be terminated, as the collector voltage is increased, is called punch through.
Statement (II): Punch through results from the increased width of the collector-junction transition region with increased collector-junction voltage.

Question 5

Copper has a resistivity of What is the end to end resistance of a copper strop, 2 cm long with cross sectional dimensions 5 mm × 1 mm?

Question 6

By doping Germanium with Gallium, the types of semiconductors formed are:
1) N type
2) P type
3) Intrinsic
4) Extrinsic
Which of the above are correct

Question 7

Consider the following statements regarding electrical properties of ceramic materials :
1) They are practically non-conductors at lower temperatures.
2) Ordinary glass and silicates in molten state are dependable as electrical nonconductors.
3) They offer high resistance to current transmission and get heated soon when conducting electric current.
Which of the above statements are correct?

Question 8

Consider the following statements: FETs when compared to BJTs have
1) high input impedance
2) current flow due to majority carriers
3) low input impedance
4) current flow due to minority carriers
Which of the statements given above are correct?

Question 9

What is the most noticeable effect of a small increase in temperature in the common emitter connected BJT?

Question 10

Which of the following are essentials of a transistor biasing circuit?
1) Proper zero signal collector current flow
2) VcE should not fall below 0.5 V for Germanium and 1 V for Silicon
3) Ensure stabilization of operating point
4) Loading to the source
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Jun 10ESE & GATE EC