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ESE 2019 Technical ( Basic Electronics: Quiz 4 )
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Question 1
Statement (I): In enhancement type MOSFET (with n-type source and drain regions), only positive voltage can be applied to the gate with respect to the substrate (p-type).
Statement (II): Only with a positive voltage to the gate, an ‘inversion layer’ is formed and conduction can take place.
Statement (II): Only with a positive voltage to the gate, an ‘inversion layer’ is formed and conduction can take place.
Question 2
Consider the following statements:
1) Type-I superconductors undergo abrupt transition to the normal state above a critical magnetic field.
2) Type-II superconductors are highly technologically useful super-conductors because the incidence of a second critical field in them is useful in the preparation of high field electromagnets.
Which of the above statements is/are correct?
1) Type-I superconductors undergo abrupt transition to the normal state above a critical magnetic field.
2) Type-II superconductors are highly technologically useful super-conductors because the incidence of a second critical field in them is useful in the preparation of high field electromagnets.
Which of the above statements is/are correct?
Question 3
Consider the following statements:
1) Metal conductors have more R at higher temperatures.
2) Tungsten can be used as a resistance wire.
3) A superconductive material is one which has practically zero resistance.
Which of the above statements are correct?
1) Metal conductors have more R at higher temperatures.
2) Tungsten can be used as a resistance wire.
3) A superconductive material is one which has practically zero resistance.
Which of the above statements are correct?
Question 4
When the working temperature becomes more than the Curie temperature, a ferromagnetic material becomes a
Question 5
Consider the following statements:
1) The pin diode consists of two narrow, but highly doped, semiconductor regions separated by a thicker, lightly doped material called the intrinsic region.
2) Silicon is used most often for its power handling capability and because it provides a highly resistive intrinsic region.
3) The pin diode acts as an ordinary diode at frequencies above 100 MHz.
Which of the above statements are correct?
1) The pin diode consists of two narrow, but highly doped, semiconductor regions separated by a thicker, lightly doped material called the intrinsic region.
2) Silicon is used most often for its power handling capability and because it provides a highly resistive intrinsic region.
3) The pin diode acts as an ordinary diode at frequencies above 100 MHz.
Which of the above statements are correct?
Question 6
The efficiency of normal LED will be around:
Question 7
Match List-I (Device) with List-II (Associated Term) and select the correct answer using the codes given below the lists:
List-I
A) Diode
B) SCR
C) BJT
D) FET
List-II
1) Pinch off voltage
2) Holding current
3) Forward resistance
4) Active region
List-I
A) Diode
B) SCR
C) BJT
D) FET
List-II
1) Pinch off voltage
2) Holding current
3) Forward resistance
4) Active region
Question 8
Assertion (A): The short-circuit current gain of a bipolar junction transistor, in common base configuration increases with increase in the reverse bias collector to base voltage.
Reason (R): With increase in the reverse bias collector to base voltage, the effective base width decreases.
Reason (R): With increase in the reverse bias collector to base voltage, the effective base width decreases.
Question 9
The best device for improving the switching speeds of bipolar transistors is
Question 10
In JFET, when operated above the pinch-off voltage, the
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