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BARC ECE 2019 : EDC Nuclear Quiz 2
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Question 1
Under the application of a bias in a typical p-n junction structure, the hole current contribution is less compare to electron current contribution. As a designer, what will you do to increase this hole current contribution than the electron contribution?
Question 2
For an n-channel MOSFET and its transfer curve shown in figure, the threshold voltage is
Question 3
In the circuit shown below, capacitor C1 and C2 are very large and are shorts at the input frequency. vi is a small signal input. The gain magnitude at 10 Mrad/s is
Question 4
The current gain of a bipolar transistor drops at high frequencies because of
Question 5
Determine VDS. IDSS= 1mA, Vp = -5V
Question 6
The primary reason for the widespread use of Silicon in semiconductor device technology is
Question 7
Consider an abrupt p-junction. Let Vbi be the built-in potential of this junction and VR be the applied reverse bias. If the junction capacitance (C1) is 1 pF for Vbi + VR = 1V, then for Vbi + VR = 4V, Cj will be
Question 8
Find the correct match between Group 1 and Group 2:
Question 9
Group I lists four types of p-n junction diodes. Match each device in Group I with one of the option in Group II to indicate the bias condition of that device in its normal mode of operation.
Question 10
The source of a silicon (ni = 1010 per cm3) n-channel MOS transistor has an area of 1 sq μm and a depth of 1 μm. If the dopant density in the source is 1019/cm3, the number of holes in the source region with the above volume is approximately
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Jun 5ESE & GATE EC