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BARC ECE 2019 : EDC Nuclear Quiz 3

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Question 1

Consider the following assertions
S1: For Zener effect to occur, a very abrupt junction is required
S2: For quantum tunneling to occur, a very narrow energy barrier is required
Which of the following is correct?

Question 2

In the following limiter circuit, an input voltage Vi = 10 sin 100πt applied. Assume that the diode drop is 0.7V when it is forward biased. The zener breakdown voltage is 6.8 V.

The maximum and minimum values of the output voltage respectively are

Question 3

At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is

Question 4

Figure is the voltage transfer characteristic of
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2004_files\image049.jpg

Question 5

For an n-channel MOSFET and its transfer curve shown in figure, the threshold voltage is
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2005_files\image102.jpgDescription: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2005_files\image103.jpg

Question 6

In the below circuit assumes that the transistor is in active region. It has a large β and its base-emitter voltage is 0.7V. The value of Ic is__

Question 7

In the circuit shown below, the silicon npn transistor Q has a very high value of β. The required value of R2 in k Ω to produce IC = 1 mA is
                

Question 8

The transistors used in a portion of the TTL gate shown in figure have β =100. The base-emitter voltage of is 0.7V for a transistor in active region and 0.75V for a transistor in saturation. If the sink current I =1mA and the output is at logic 0, then the current IR will be equal to
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC-ME-17-Mar\GATE-ECE-2005_files\image114.jpg

Question 9

If C denotes the counterclockwise unit circle, the value of the contour integral Description: Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-2_files\image323.pngis ______

Question 10

Consider the following two statements about the internal conditions in an n-channel MOSFET operating in the active region.
S1: The inversion charge decreases from source to drain
S2: The channel potential increases from source to drain
Which of the following is correct?
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