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AE 2019 || Day 28 || Analog Electronics Quiz 4
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Question 1
An emitter in a bipolar junction transistor is doped much more heavily than the base as it increases the
Question 2
What are the states of the three ideal diodes in the circuit as shown below?
Question 3
In a centre tap full wave rectifier, 100 V is the peak voltage between the centre tap and one end of the secondary. What is the maximum voltage across the reverse biased diode?
Question 4
For a Silicon n-p-n transistor the base to emitter voltage (VBE) is 0.7 V and the collector to base voltage (VCB) is 0.2 V. Then the transistor is operating in the
Question 5
For the circuit shown in Figure-A the V-I (voltage-current) characteristic of the circuit using ideal components is given by curve a in FigureB.
Which curve in Figure-B represents the V-I characteristic for the circuit shown in Figure-C?
Which curve in Figure-B represents the V-I characteristic for the circuit shown in Figure-C?
Question 6
In an IGBT cell the collector and emitter are respectively
Question 7
What is the thermal runway in a bipolar junction transistor blased in the active region due to?
Question 8
What is the main difference between MOSFETs and BJTs in terms of their I-V characteristics?
Question 9
Which one of the following statements is correct in respect of BJT?
Question 10
In a common collector amplifier the voltage gain is
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ESE & GATE EEGeneralApr 25ESE & GATE EE
