RRB/SSC JE Electrical 2019 || Basic Electronics Quiz 2

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Question 1

The primary reason for the widespread use of Silicon in semiconductor device technology is

• Aabundance of Silicon on the surface of the Earth
• Blarger bandgap of Silicon in comparison to Germanium
• Cfavorable properties of Silicon-dioxide (SiO₂)
• Dlower melting point

Question 2

The I-V characteristics of three types of diodes at the room temperature, made of semiconductors X, Y and Z, are shown in the figure. Assume that the diodes are uniformly doped and identical in all respects except their materials. If EgX, EgY and EgZ are the band gaps of X, Y and Z, respectively, then

• A
• B
• C
• Dno relationship among these band gaps exists

Question 3

The bandgap of silicon at 300 K is

• A1.36 eV
• B1.10 eV
• C0.80 eV
• D0.67 eV

Question 4

Which of the following semi-conductor parameters vary with temperature?
i) Intrinsic concentration (η_i)
ii) Mobility (μ)
iii) Conductivity (σ)
iv) Energy gap (E_G)

• A(i) and (ii) only
• B(ii),(iii) and (iv) only
• CAll the above.
• DNone of the above.

Question 5

There are two energy levels E₁ and E₂ . E₁ is E eV above the fermi level and E₂ is E eV below the fermi level.
P₁ = the probability of E₁ being occupied by an electron.
P₂= the probability of E₂ being empty.
Then, which of the following is correct?

• A
• B
• C
• D depend on number of free electrons.

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