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GATE EC 2020 : Electronic Devices & Circuits Quiz 7

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Question 1

The values of voltage (V_D) across a tunnel-diode corresponding to peak and valley currents are V_P and V_V respectively. The range of tunnel-diode voltage V_D for which the slope of its I – V_D characteristics is negative would be

Question 2

When the optical power incident on a photodiode is 10 µW and the responsivity is 0.8 A/W, the photocurrent generated (in µA) is ____

Question 3

Match items in Group 1 with item in Group 2, most suitable.
Group 1
P- LED
Q- Avalanche photodiode
R- Tunnel diode
S- LASER
Group 2
1- Heavy doping
2- Coherent radiation
3- Spontaneous emission
4- Current gain

Question 4

A particular green LED emits light of wavelength 5490^oA. The energy band gap of the semiconductor material used there is (Planck’s constant = 6.625x10^-34 J-s.)

Question 5

For the circuit shown below, assume that the zener diode is ideal with a breakdown voltage of 6 Volts. The waveform observed across R is:

Question 6

Consider avalanche breakdown in a silicon p⁺n junction. The n-region is uniformly doped with a donor density N_D. Assume that breakdown occurs when the magnitude of the electric field at any point in the device becomes equal to the critical field E_CRIT. Assume E_CRITto be independent of N_D. If the built-in voltage of the

junction is much smaller than the breakdown voltage, V_BR, the relationship between

and

is given by

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ESE & GATE EC Electronic Devices and Circuits

Mar 9ESE & GATE EC