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GATE EC 2020: Revision test Quiz 4 (App update required to attempt this test)
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Question 1
A sequence generator generates a sequence 1011110. How many flip-flops apart from the flip-flop from which the output is taken, are required to generate this sequence?
Question 2
Consider the circuit shown in the figure below:
Let the forward voltage drop V for the diode. The circuit is connected with two power supplies with values V1 = 10 V and V2 = 15 V, then the value of current passing through the diode D is equal ______ mA.
Question 3
For the DAC shown below step size is 0.5 V, It digital input varies from 0 to 5 V. The value of Rf in Ω will be.
Question 4
If a characteristics equation has roots then the values of natural frequency and damping ratio will be respectively.
Question 5
Transfer function of an LTI system is given as . Find the gain of the system at a frequency of .
Question 6
From which of the following is the Boolean expression of a most significant bit of digital circuit which can converts BCD (in binary) to its 9's complement format (in binary), consider the given circuit as shown in figure to identity the input and output variables
Question 7
Consider the 2 port circuit given below
Hybrid parameter h12 for the circuit is _____.
Hybrid parameter h12 for the circuit is _____.
Question 8
If both the transistor are operating in linear region and perfectly matched with β, IE1 = IE2 and VT = 25 mV, then voltage gain will be ___________.
Question 9
Consider the following assembly language program of 8085 microprocessor, which is intended to transfer a block of 5 bytes from A000H to 9000H:
START : LXIB, 9000H
LXIH, A000H
MVIC, 05H
LOOP : MOV A, M
STAX B
INX B
INX H
DCR C
JNZ LOOP
HLT
The above program will not serve the purpose for which it is intended, because
Question 10
Find the output of the given circuit If A+B=Y.
Question 11
A silicon bar is doped with arsenic atoms / . The equilibrium hole concentration at 300 k and the location of the Fermi level () of sample relative to intrinsic Fermi level () are _____
()
Question 12
Figure shown below is a plot of the steady state carrier concentration inside a p-n junction maintained at room temperature.
What is the condition of the diode?
What is the condition of the diode?
Question 13
Calculate value of RL so that maximum power is transmitted through RL
Also calculate maximum power generated.
Also calculate maximum power generated.
Question 14
Consider an MOS structure with n-type silicon. A metal- semiconductor work function difference of Φms = - 0.35 V is required. For an aluminium- silicon dioxide junction, Φm′ = 3.20 V and for a silicon-silicon dioxide junction x′ = 3.25 V and Eg = 1.11 eV. If the gate is aluminium, then what is the silicon doping required to meet the specification?
Question 15
For the given circuit, the initial current through the inductor is i(0) =12A, then find the current for all?
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ESE & GATE ECAnalog CircuitsControl SystemsDigital CircuitsElectronic Devices and CircuitsNetwork TheoryNov 27ESE & GATE EC