ISRO EC 2019: Analog Circuits Booster Quiz 2

Consider the following statements related to the flow of current in a PN junction diode:

1. The reverse bias current is due to the diffusion of minority charge carriers.

2. The reverse bias current is due to the drift of thermally generated carriers in the depletion region.

3. The forward bias current is due to the diffusion of minority charge carriers.

4. The forward bias current is due to the drift of majority charge carriers.

Which of the following statement is/are not true?

Transformer utilization factor (TUF) for the rectifiers is

Consider the junction of a p-n diode. Suppose the p side is now heavily doped with acceptor atoms. Such junction is called as one sided. Consider the following statements now:

The p-n junction has N_D =10²³m^-3 and N_A=10²⁶ m^-3 and

Built-in potential 1V.

The depletion width is equal to?

Determine the dc bias voltage , if for the given network.

In the circuit shown transistor has β = 100. V_BE(sat) = 0.8 V and V_CE(sat) = 0.2 V. Then the region of operation

For the circuit given in figure below, find the reading of the ammeter. [assume the diode to be ideal].

The figure shows four electronic switches (i), (ii), (iii) and (iv). Which of the switches can block voltages of either polarity (applied between terminals 'a' and 'b') when the active device is in the OFF state?