Time Left - 15:00 mins
GATE 2020: Electronic Devices and Circuits Rapid Quiz - 2 (App update required to attempt this test)
Attempt now to get your rank among 661 students!
Question 1
Which of the following statements is false with respect to MOSFET?
Question 2
When the optical power incident on a photodiode is 10μW and the responsivity is 0.8A/W, the photocurrent generated (inμA) is ________.
Question 3
A transistor with emitter base voltage (
) of 10mV has a collector current (
) of 2 mA. For 
of 20 mV, 
is 20mA. Then what will be the value of 
(in A) when 
is 40mV?
) of 10mV has a collector current () of 2 mA. For of 20 mV, is 20mA. Then what will be the value of (in A) when is 40mV?Question 4
A silicon pn junction has dopant concentration of 
and 
at T=300K. A reverse bias voltage of 
is applied to the pn junction. What will be the total space charge width in the pn junction?
and at T=300K. A reverse bias voltage of is applied to the pn junction. What will be the total space charge width in the pn junction? Question 5
The maximum power dissipation capacity of a transistor is 50 mW. If the collector emitter voltage is 10 V. What is the safe collector current that can be allowed through the transistor?
Question 6
A diode has reverse saturation current Is=10-18 A and non ideality factor η =1.05. If diode current is 70μA, then diode Voltage is _____V.
- 661 attempts
- 0 upvotes
- 2 comments
Sep 12ESE & GATE EC
