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GATE 2020: Electronic Devices and Circuits Rapid Mini Mock (App update required to attempt this test)

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Question 1

What is the value of if an input signal ranges from 20μA - 60μA with an output signal ranging from 0.25 mA – 2 mA

Question 2

The average drift velocity of free electrons is 60 m/s when an electric field intensity of 10 V/cm is applied across a semiconductor at a certain temperature. Then what is the electron mobility?

Question 3

Consider the two diode circuit as shown in the figure below :-

The diode D1 and D2 are identical except for the fact that the area of diode D1 is A1 and area of diode D2 is A2. If the input current supplied by the voltage Source Vin is equal to Iin, then value of current passing through the diode D2 (ID2) is equal to

Question 4

An intrinsic semiconductor of is doped with  acceptor / cm3, given μp = 2550 cm2/V–sec, μn = 4000 cm2 / V – sec. calculate conductivity in S/cm assuming doping efficiency as 80%

Question 5

A transistor has parameters as hie = 10 , hre = , hfe = 100, hoe = 25 . The hib for this transistor will be

Question 6

An n-type silicon sample contains a donor concentration ND = 2 1016 cm-3. The minority carrier lifetime is 5 μs. The thermal equilibrium generation rate of hole is

Question 7

The parameter of the transistor in figure . and

The voltage is ________(V)

Question 8

In a hall experiment, the p – type specimen carrier current in the positive x. direction and the applied magnetic field is in the positive z direction. Then the resultant force on the charge carriers due to magnetic field will be in.

Question 9

Consider a silicon PN junction at T = 300K with current density 3.6 10-11 A/cm2. If the photocurrent density is 10 mA/cm2. Then find the open circuit voltage (in V) of a solar cell when the solar intensity is increased by a factor of

Assume thermal voltage VT = 26 mV

Question 10

In a n-type gallium arsenide semiconductor at a temperature T = 300 k, the electron concentration varies linearly from 1016 to 1017 cm–3 over a distance of 0.5cm. If the electron diffusion coefficient is Dn = 1250 cm2/s then the electron diffusion current density will be

Question 11

A GaP has an indirect band gap of 2.26 ev at temperature σf 300 K. It produces light with a wave length (d) of _____________ μm.

Question 12

In the circuits shown, the threshold voltage of each nMOS transistor is 0.6 V. Ignoring the effect of channel length modulation and body bias, the values of Vout 1 and Vout 2, respectively, in volts, are

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Dec 11ESE & GATE EC