Daily Practice Quiz 1: Electronic Devices (App update required to attempt this test) for ESE & GATE EC Exams

Question 1

An abrupt silicon pn junction has dopant concentrations of N_a = 2 × 10¹⁶ cm^–3 and N_d = 2 × 10¹⁵ cm^–3 at T = 300 K. A reverse-bias voltage of V_R = 8 V is applied to the pn junction. (for si, relative permittivity ϵ_r = 11.7).

The total space charge width in the pn junction will be _ _ _ × 10^–4 cm.

Question 2

An abrupt silicon pn junction has dopant concentrations of N_a = 2 × 10¹⁶ cm^–3 and N_d = 2 × 10¹⁵ cm^–3 at T = 300 K. A reverse-bias voltage of V_R = 8 V is applied to the pn junction. (for si, relative permittivity ϵ_r = 11.7).

The maximum electric field in the space charge region will be _ _ _ _ × 10⁴V/cm.

Question 3

An abrupt silicon pn junction at zero bias has dopant concentrations of N_a = 10¹⁷ cm^–3 and N_d = 5 × 10¹⁵ cm^–3 at T = 300K. What will be the differences in Fermi levels in n and p-regions respectively?

Question 4

Direction: A silicon abrupt junction in thermal equilibrium at T= 300K is doped such that E_c — E_F = 0.21 eV in n-region and E_F – E_v = 0.18 eV in the p-region.

What will be the impurity doping concentrations N_d and N_a in n and p-regions respectively?

Question 5

Direction: A silicon abrupt junction in thermal equilibrium at T= 300K is doped such that E_c — E_F = 0.21 eV in n-region and E_F – E_v = 0.18 eV in the p-region.

The built in potential barrier, V_bi in the pn junction will be

Question 6

At T = 300 K, silicon pn junction has the following doping concentrations:

N_d = 10¹⁵cm^–3, N_a = 10¹⁶cm^–3

The built-in potential barrier, V_bi in the pn junction will be _ _ _ _ V.