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Daily Practice Quiz 4: Electronic Devices

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Question 1

The built-in potential (diffusion potential) in a p-n junction

Question 2

In the depletion region of a PN junction, there are ___________.

Question 3

Direction: A silicon abrupt junction in thermal equilibrium at T= 300K is doped such that Ec — EF = 0.21 eV in n-region and EF – Ev = 0.18 eV in the p-region.
What will be the impurity doping concentrations Nd and Na in n and p-regions respectively?

Question 4

Direction: A silicon abrupt junction in thermal equilibrium at T= 300K is doped such that Ec — EF = 0.21 eV in n-region and EF – Ev = 0.18 eV in the p-region.
The built in potential barrier, Vbi in the pn junction will be

Question 5

For a p-n junction diode the doping concentration on the n-side is ND = 1015 cm-3 and the doping concentration on the p-side is NA = 1014 cm-3. The intrinsic carrier concentration of material used to form the diode is 1012 cm-3. The built in potential of the diode is
(Assume VT = 25 mV)

Question 6

Consider the following charge density distribution of step junction of a PN diode under thermal equilibrium condition

If WP = 1mm and WN = 1.5 mm, then the relation between the doping concentration NA and ND is _______

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May 7ESE & GATE EC