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Daily Practice Quiz 10: Electronic Devices

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Question 1

If the diodes in the circuit shown below are ideal, then the current I flowing through the diode D1 is:

Question 2

The applied reverse – bias voltage at which the ideal reverse current in a pn junction diode at T = 300K reaches 90 percent of its reverse saturation current value is

Question 3

A silicon p+n junction at T = 300K has doping concentrations of Na = 1018 cm-3 and Nd = 5 × 1015 cm-3. The cross-sectional area of the junction is A = 5 × 10-5 cm2. What will be the junction capacitance for the applied reverse voltage, VR = 3V?

Question 4

A uniformly doped silicon pn junction has dopant profile of . If the peak electric field in the junction at breakdown Is , the breakdown voltage of this junction is

Question 5

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE?
Description: D:\GradeStack Courses\GATE Tests (Sent by Ravi)\GATE EC 10-Mar\GATE-ECE-2015-Paper-3_files\image136.png

Question 6

Consider the circuit shown below:
 


If D1, D2 and D3 are ideal then which of these diodes will remain OFF.
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Aug 19ESE & GATE EC