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GATE 2021:EDC- Rapid Mini Mock (App update required to attempt this test)
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Question 1
Which of the following statements are true about the Hall Effect experiment and the results obtained from it.
I. It is used to distinguish between n -type and p-type semiconductor
II. It is used to calculate majority carrier concentration and mobility.
III. Force on electron in the direction given by the vector Bv.
IV. The Hall voltage is positive for n-type semiconductor.
I. It is used to distinguish between n -type and p-type semiconductor
II. It is used to calculate majority carrier concentration and mobility.
III. Force on electron in the direction given by the vector Bv.
IV. The Hall voltage is positive for n-type semiconductor.
Question 2
For an n-channel MOSFET with VT = 0.56 V, W = 30 µm and L= 0.5 µm. What is the drain current for VGS=4V and VDS=1.2V. The electron mobility is 200cm2/V-s and Cox = 5 x 10-7F/cm2.
Question 3
Which of the following is true?
Question 4
A transistor with emitter base voltage () of 10mV has a collector current () of 2 mA. For of 20 mV, is 20mA. Then what will be the value of (in A) when is 40mV?
Question 5
A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1μm at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to 0.6μm is _________.
Question 6
Consider the following statements S 1 and S2.
S1 : The β of a bipolar transistor reduces if the base width is increased.
S2 : The β of a bipolar transistor increases if the doping concentration in the base in increased
Which one of the following is correct?
S1 : The β of a bipolar transistor reduces if the base width is increased.
S2 : The β of a bipolar transistor increases if the doping concentration in the base in increased
Which one of the following is correct?
Question 7
For a given quantum efficiency in a light detector, responsivity vs wavelength relation is related as
Question 8
For a double hetero junction LED emitting light at a peak wavelength of 1.3 μm has radiative and non-radiative recombination time as 40 nsec and 120 nsec respectively, then the bulk recombination lifetime will be
Question 9
If Io for germanium diode is given by the relation EG0 = 0.785 V
Then calculate by what factor IO gets multiplied when temperature is increased from 25°C to 85°C
Question 10
Which one of the following options describes correctly the equilibrium band diagram at T = 300 K of a Silicon pnn+p++ configuration shown in the figure?
Question 11
The built in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance (Cj) at reverse bias of 0.25 V is 5 PF, then the value of Cj (in PF) when reverse bias of 8.25 applied is ______
Question 12
Silicon is doped with boron to a concentration of 4×1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of to be 25 mV at 300 K
Compared to undoped silicon, the Fermi level of doped silicon?
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Jun 5ESE & GATE EC