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GATE 2021:EDC- Rapid Mini Mock (App update required to attempt this test)

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Question 1

Which of the following statements are true about the Hall Effect experiment and the results obtained from it.
I. It is used to distinguish between n -type and p-type semiconductor
II. It is used to calculate majority carrier concentration and mobility.
III. Force on electron in the direction given by the vector BDescription: E:\Gate\Gate-EC\03_Elctro-Devic_B-done_files\image021.pngv.
IV. The Hall voltage is positive for n-type semiconductor.

Question 2

For an n-channel MOSFET with VT = 0.56 V, W = 30 µm and L= 0.5 µm. What is the drain current for VGS=4V and VDS=1.2V. The electron mobility is 200cm2/V-s and Cox = 5 x 10-7F/cm2.

Question 3

Which of the following is true?

Question 4

A transistor with emitter base voltage () of 10mV has a collector current () of 2 mA. For of 20 mV, is 20mA. Then what will be the value of (in A) when is 40mV?

Question 5

A p-n step junction diode with a contact potential of 0.65 V has a depletion width of 1μm at equilibrium. The forward voltage (in volts, correct to two decimal places) at which this width reduces to 0.6μm is _________.

Question 6

Consider the following statements S ­1 and S2.
S1 : The β of a bipolar transistor reduces if the base width is increased.
S2 : The β of a bipolar transistor increases if the doping concentration in the base in increased
Which one of the following is correct?

Question 7

For a given quantum efficiency in a light detector, responsivity vs wavelength relation is related as

Question 8

For a double hetero junction LED emitting light at a peak wavelength of 1.3 μm has radiative and non-radiative recombination time as 40 nsec and 120 nsec respectively, then the bulk recombination lifetime will be

Question 9

If Io for germanium diode is given by the relation EG0 = 0.785 V

Then calculate by what factor IO gets multiplied when temperature is increased from 25°C to 85°C

Question 10

Which one of the following options describes correctly the equilibrium band diagram at T = 300 K of a Silicon pnn+p++ configuration shown in the figure?

Question 11

The built in potential of an abrupt p-n junction is 0.75 V. If its junction capacitance (Cj) at reverse bias of 0.25 V is 5 PF, then the value of Cj (in PF) when reverse bias of 8.25 applied is ______

Question 12

Silicon is doped with boron to a concentration of 4×1017 atoms/cm3. Assuming the intrinsic carrier concentration of silicon to be 1.5×1010/cm3 and the value of to be 25 mV at 300 K
Compared to undoped silicon, the Fermi level of doped silicon?

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Jun 5ESE & GATE EC